1 features ? direct attach led technology ? rectangular led rf performance C 450 & 460 nm C 430 mw min ? high reliability - eutectic attach ? low forward voltage (vf) C 3.3 v typical at 350 ma ? maximum dc forward current C 750 ma ? ingan junction-down design for improved thermal management ? no wire bonds required applications ? general illumination ? aircraft ? decorative lighting ? task lighting ? outdoor illumination ? white leds ? camera flash ? projection displays ? automotive ? large lcd backlighting C television direct attach da700? leds c xxx da700-s xx 000 data sheet crees direct attach da700 leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon-carbide substrates to deliver superior value for the tv-backlighting and general-illumination markets. the da700 leds are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly effcient solution. the bondpad-down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. c xxx da700-s xx 000 chip diagram d a t a s h e e t : c p r 3 e u r e v . - top view bottom view die cross section anode (+) 645 x 75 m da700 led 700 x 700 m t = 335 m cathode (-) 645 x 495 m gap 75 m subject to change without notice. www.cree.com
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da700 are trademarks of cree, inc. 2 cpr3eu rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1, 2 & 3 c xxx da700-s xx 000 dc forward current 750 ma peak forward current (1/10 duty cycle @ 1 khz) 1000 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450da700-s xx 000 2.9 3.3 3.5 2 20 c460da700-s xx 000 2.9 3.3 3.5 2 21 mechanical specifcations c xxx da700-s xx 000 description dimension tolerance p-n junction area (m) 645 x 645 35 chip bottom area (m) 700 x 700 35 chip top area (m) 340 x 340 35 chip thickness (m) 335 25 ausn bond pad width C anode (um) 75 15 ausn bond pad length C anode (um) 645 35 ausn bond pad width C cathode (um) 495 35 ausn bond pad length C cathode (um) 645 35 bond pad gap (m) 75 15 ausn bond pad thickness (m) 3 0.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a cree 3.45-mm x 3.45-mm smt package (with silicone encapsulation and intrinsic ausn metal die attach) for characterization. ratings for other packages may differ. junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1? packages (with hysol os4000 epoxy encapsulant and intrinsic ausn metal die attach). optical characteristics measured in an integrating sphere using illuminance e. 3. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 100 200 300 400 500 600 700 800 25 50 75 100 125 150 175 maximum forward current (ma) ambient temperature ( ? c) rth j - a = 10 ? c/w rth j - a = 15 ? c/w rth j - a = 20 ? c/w rth j - a = 25 ? c/w
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da700 are trademarks of cree, inc. 3 cpr3eu rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx da700-s xx 000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx da700-s xxxxx ) orders may be flled with any or all bins (c xxx da700- xxxxx ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. note: the radiant-fux values above are representative of the die in a t-1? encapsulated 5-mm lamp. c450da700-s43000 c450da700-0217 c450da700-0218 c450da700-0219 c450da700-0220 c450da700-0213 c450da700-0214 c450da700-0215 c450da700-0216 c450da700-0209 c450da700-0210 c450da700-0211 c450da700-0212 c450da700-0205 c450da700-0206 C450DA700-0207 c450da700-0208 dominant wavelength (nm) 447.5 450 452.5 445 455 515 485 455 430 radiant flux (mw) c460da700-s43000 c460da700-0217 c460da700-0218 c460da700-0219 c460da700-0220 c460da700-0213 c460da700-0214 c460da700-0215 c460da700-0216 c460da700-0209 c460da700-0210 c460da700-0211 c460da700-0212 c460da700-0205 c460da700-0206 c460da700-0207 c460da700-0208 dominant wavelength (nm) 457.5 460 462.5 455 465 515 485 455 430 radiant flux (mw)
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da700 are trademarks of cree, inc. 4 cpr3eu rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the da led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 25% 50% 75% 100% 125% 150% 175% 200% 0 100 200 300 400 500 600 700 relative intensity if (ma) relative intensity vs. forward current - 2 - 1 0 1 2 0 100 200 300 400 500 600 700 dw shift (nm) if (ma) wavelength shift vs. forward current 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative intensity junction temperature ( c) relative light intensity vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative intensity junction temperature ( c) relative light intensity vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature - 0.400 - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature -2 -1 0 1 2 0 100 200 300 400 500 600 700 dw shift (nm) if (ma) wavelength shift vs. forward current 0 100 200 300 400 500 600 700 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 2 - 1 0 1 2 0 100 200 300 400 500 600 700 dw shift (nm) if (ma) wavelength shift vs. forward current 0 100 200 300 400 500 600 700 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da700 are trademarks of cree, inc. 5 cpr3eu rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the da led product. actual patterns will vary slightly for each chip. da700 blue
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